Title :
Amorphous film magnetic bubble domain devices
Author :
Kryder, M.H. ; Ahn, K.Y. ; Powers, J.V.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, N.Y., U.S.A.
fDate :
9/1/1975 12:00:00 AM
Abstract :
Operation of all functions in an 8000 bit bubble domain device with 107bit/in2storage density on an amorphous film has been achieved. High frequency data clearly establishes 1 MHz operation in the amorphous films and large wall velocities indicate that frequencies in excess of 10 MHz may be possible. Replicate-transfer switches were made to operate with currents of 12 ma and chevron expander detectors produced 3 mv signals from the 2 μm domains. Relationships between materials characteristics and device performance are established and discussed.
Keywords :
Amorphous magnetic films/devices; Magnetic bubble memories; Amorphous magnetic materials; Amorphous materials; Coercive force; Electron beams; Garnet films; Lithography; Magnetic devices; Magnetic domains; Magnetic films; Switches;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1975.1058939