Title :
High voltage electron lithography
Author :
Neill, T.R. ; Bull, C.J.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
Experiments with a 50 keV electron beam confirmed that backscatter exposure close to pattern edges is reduced substantially compared with the lithographic experience at 20 keV. This, together with reduced beam spreading in the resist, permits improved definition of low micrometre and submicrometre features at a uniform dose.
Keywords :
electron beam lithography; integrated circuit technology; HV electron beam lithography; backscatter exposure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800431
