Title :
Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantation
Author :
Eguren, J. ; del Alamo, Jesus ; Luque, Antonio
Author_Institution :
Universidad Politécnica de Madrid, Laboratorio de Semiconductores, Instituto de EnergÃ\xada Solar, Madrid, Spain
Abstract :
High-low junctions of n+-p-p+ bifacial back surface field solar cells have been fabricated by B11+ implantation. After an isothermal annealing step at 900°C for 10 min, an optimum surface concentration of 5 × 1019 cm¿3 is observed. Its origin is found to lie in the partial electrical activation of the implanted impurities.
Keywords :
annealing; ion implantation; optimisation; semiconductor doping; solar cells; bifacial back surface field solar cells; doping level; electrical activation; ion implantation; isothermal annealing; optimisation; surface concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800439
