Title :
Ion implanted GaAs bipolar transistors
Author :
Yuan, H.T. ; Doerbeck, F.H. ; McLevige, W.V.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
GaAs n-p-n bipolar transistors were fabricated by ion implanting Be and Se into bulk n-type substrate material. Devices with mesa collectors exhibit a d.c. current gain hFE ¿ 8 and a reverse bias leakage current of less than 10 nA.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; ion implantation; Be; GaAs bipolar transistors; Se; current gain; mesa collectors; reverse bias leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800442
