Title :
Erratum: Dual gate GaAs m.e.s.f.e.t. phase shifter with gain at 12 GHz
Author :
Tsironis, Christos ; Harrop, Peter
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; phase shifters; solid-state microwave circuits; 12 GHz; 4 dB insertion gain; dual gate GaAs MESFET phase shifter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800452
