• DocumentCode
    957639
  • Title

    Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers

  • Author

    Dutta, N.K. ; Nelson, R.J. ; Barnes, P.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    16
  • Issue
    17
  • fYear
    1980
  • Firstpage
    653
  • Lastpage
    654
  • Abstract
    Measurements are reported of the electrical characteristics and temperature dependence of threshold current of InGaAsP-InP d.h. lasers (¿ = 1.3 ¿m). Analysis of the I dV/dI characteristics of these devices indicates that drift leakage of carriers from the active region is not responsible for the high temperature sensitivity of threshold in this material system.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; III-V semiconductor; InGaAsP-InP DH lasers; electrical characteristics; temperature dependence; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800463
  • Filename
    4244237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957639