Title :
Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers
Author :
Dutta, N.K. ; Nelson, R.J. ; Barnes, P.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Measurements are reported of the electrical characteristics and temperature dependence of threshold current of InGaAsP-InP d.h. lasers (¿ = 1.3 ¿m). Analysis of the I dV/dI characteristics of these devices indicates that drift leakage of carriers from the active region is not responsible for the high temperature sensitivity of threshold in this material system.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; III-V semiconductor; InGaAsP-InP DH lasers; electrical characteristics; temperature dependence; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800463
