• DocumentCode
    957694
  • Title

    Modulating transistor: a new class of semiconductor device

  • Author

    Fursin, G.I.

  • Author_Institution
    Moscow Physical Technical Institute, Moscow, USSR
  • Volume
    16
  • Issue
    17
  • fYear
    1980
  • Firstpage
    662
  • Lastpage
    663
  • Abstract
    A new negative resistance transistor n+-p-p¿-p structure, consisting of four layers with three electrodes, is reported. The negative resistance effect is due to bulk conductivity modulation. Common emitter, common collector and common base characteristics are described.
  • Keywords
    bipolar transistors; negative resistance effects; bipolar transistors; common base; common collector; common emitter; modulating transistor; n+-p-p--p structure; negative resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800469
  • Filename
    4244243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957694