Title :
Modulating transistor: a new class of semiconductor device
Author_Institution :
Moscow Physical Technical Institute, Moscow, USSR
Abstract :
A new negative resistance transistor n+-p-p¿-p structure, consisting of four layers with three electrodes, is reported. The negative resistance effect is due to bulk conductivity modulation. Common emitter, common collector and common base characteristics are described.
Keywords :
bipolar transistors; negative resistance effects; bipolar transistors; common base; common collector; common emitter; modulating transistor; n+-p-p--p structure; negative resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800469
