• DocumentCode
    957732
  • Title

    Two-dimensional electron gas m.e.s.f.e.t. structure

  • Author

    Delagebeaudeuf, D. ; Delescluse, P. ; Etienne, P. ; Laviron, M. ; Chaplart, J. ; Linh, Nuyen T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratories, Orsay, France
  • Volume
    16
  • Issue
    17
  • fYear
    1980
  • Firstpage
    667
  • Lastpage
    668
  • Abstract
    The first m.e.s.f.e.t. structure is reported in which the channel near pinch-off is occupied by a two-dimensional electron gas accumulated at the interface of a GaAs(N)-AlxGa1¿xAs(N) heterojunction. Experimental data are in good agreement with theoretical calculations.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron gas; gallium arsenide; p-n heterojunctions; GaAs(N)-AlxGa1-xAs(N) heterojunction; III-V semiconductors; two dimensional electron gas MESFET structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800473
  • Filename
    4244247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957732