Title :
Two-dimensional electron gas m.e.s.f.e.t. structure
Author :
Delagebeaudeuf, D. ; Delescluse, P. ; Etienne, P. ; Laviron, M. ; Chaplart, J. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Central Research Laboratories, Orsay, France
Abstract :
The first m.e.s.f.e.t. structure is reported in which the channel near pinch-off is occupied by a two-dimensional electron gas accumulated at the interface of a GaAs(N)-AlxGa1¿xAs(N) heterojunction. Experimental data are in good agreement with theoretical calculations.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron gas; gallium arsenide; p-n heterojunctions; GaAs(N)-AlxGa1-xAs(N) heterojunction; III-V semiconductors; two dimensional electron gas MESFET structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800473
