Title :
Coherence of injection phase-locked AlGaAs semiconductor laser
Author :
Kobayashi, S. ; Kimura, Tomohiro
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Injection phase locking of an AlGaAs double heterostructure laser was studied with respect to visibility. The maximum value of visibility measured by interference experiment with the injecting wave was 0.87. Causes of the visibility degradation were attributed to the light from a heat sink plane and to spurious modes other than the locked central mode.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light coherence; semiconductor junction lasers; visibility; AlGaAs DH lasers; III-V semiconductor; coherence; heat sink plane; injection phase locking; visibility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800474
