DocumentCode :
957751
Title :
Comparative rating of logic active devices
Author :
Giacoletto, L.J.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
Volume :
36
Issue :
11
fYear :
1989
fDate :
11/1/1989 12:00:00 AM
Firstpage :
2592
Lastpage :
2593
Abstract :
The change in a logic figure of merit as the ultimate speed of logic active devices is tracked over a period of years. Current high-speed FET devices have ultimate speeds corresponding to an equivalent wire length of 3.4 mm, which is comparable to the distance between input and output terminals. Consequently, further significant increases in logic speed for active devices cannot be expected.
Keywords :
field effect transistors; logic circuits; comparative rating; equivalent wire length; high-speed FET devices; logic active devices; logic figure of merit; logic speed; ultimate speed; Capacitance; Electron tubes; FETs; HEMTs; Joining processes; Logic devices; MODFETs; Positron emission tomography; Transmission line measurements; Wire;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.43684
Filename :
43684
Link To Document :
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