• DocumentCode
    957796
  • Title

    C/V measurements of m.i.s. structures on n-InSb formed by room temperature reactive deposition of Si3N4

  • Author

    Olcaytug, F. ; Riedling, K. ; Fallmann, W.

  • Author_Institution
    Technische Universitÿt Wien, Institut fÿr Allgemeine Elektrotechnik und Elektronik,, Vienna, Austria
  • Volume
    16
  • Issue
    17
  • fYear
    1980
  • Firstpage
    677
  • Lastpage
    678
  • Abstract
    C/V measurements were performed on Si3N4 layers on n-InSb substrates, which had been grown in an r.f. glow discharge at room temperature. Surface state densities on B-type (111) substrates were substantially larger than on A-type substrates. These structures could be biased to accumulation, to depletion, and even to inversion.
  • Keywords
    III-V semiconductors; indium compounds; metal-insulator-semiconductor structures; plasma deposition; silicon compounds; C/V measurement; III-V semiconductor; InSb substrates; RF glow discharge; Si3N4 layers; accumulation; depletion; inversion; reactive deposition; surface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800480
  • Filename
    4244254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957796