Title :
C/V measurements of m.i.s. structures on n-InSb formed by room temperature reactive deposition of Si3N4
Author :
Olcaytug, F. ; Riedling, K. ; Fallmann, W.
Author_Institution :
Technische Universitÿt Wien, Institut fÿr Allgemeine Elektrotechnik und Elektronik,, Vienna, Austria
Abstract :
C/V measurements were performed on Si3N4 layers on n-InSb substrates, which had been grown in an r.f. glow discharge at room temperature. Surface state densities on B-type (111) substrates were substantially larger than on A-type substrates. These structures could be biased to accumulation, to depletion, and even to inversion.
Keywords :
III-V semiconductors; indium compounds; metal-insulator-semiconductor structures; plasma deposition; silicon compounds; C/V measurement; III-V semiconductor; InSb substrates; RF glow discharge; Si3N4 layers; accumulation; depletion; inversion; reactive deposition; surface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800480
