Title :
Channelled substrate lasers prepared by combination of organometallic pyrolysis and liquid-phase epitaxy
Author :
Noad, J.P. ; Look, C.M. ; SpringThorpe, A.J.
Author_Institution :
Bell-Northern Research, Ottawa, Canada
Abstract :
Channelled substrate planar (c.s.p.) GaAlAs-GaAs d.h. lasers with p-type blocking layers have been prepared using a combination of organometallic pyrolysis and liquid-phase epitaxy. The use of o.m.p. to prepare the channelled blocking layers allows the growth of thin first confining layers necessary for good mode control. Devices produced in this manner are both linear and single-mode to power levels in excess of 14 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; pyrolysis; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAlAs-GaAs; III-V semiconductors; above 14 mW; channelled substrate lasers; liquid phase epitaxy; organometallic pyrolysis; semiconductor growth; semiconductor junction lasers; vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800486
