Light emission from the GaAs/AlGaAs HBT collector junction at breakdown

Author

Chen, Jiann-Jong ; Gao, G.B. ; Huang, Dijiang ; Chyi, J.I. ; Unlu, M.S. ; Morkoc, H.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2600

Lastpage

2601

Abstract

Summary form only given. The authors report the observation of light emission from the GaAs collector-base junction of a GaAs/AlGaAs HBT (heterojunction bipolar transistor) at breakdown. The photoemission spectra of the reverse-bias junction and resolved peaks at 2.03 and 1.43 eV were measured, with the intensities dependent upon the reverse current. An experimental technique for measuring the threshold energy for impact ionization in the investigated material is reported.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; light emitting devices; GaAs collector-base junction; GaAs-AlGaAs; HBT collector junction at breakdown; experimental technique; heterojunction bipolar transistor; light emission; photoemission spectra; resolved peaks; reverse-bias junction; semiconductors; threshold energy for impact ionization; Avalanche breakdown; Charge carrier processes; Contracts; Current measurement; Electric breakdown; Electron emission; Energy measurement; Energy resolution; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Photoelectricity; Spontaneous emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43692

Filename

43692