Title :
Effect of p-doping on carrier lifetime and threshold current density of 1.3 ¿m GaInAsP/InP lasers by liquid-phase epitaxy
Author :
Ng, Wilfred ; Liu, Y.Z.
Author_Institution :
Rockwell International, Electronics Research Center, Thousand Oaks, USA
Abstract :
A correlation was found between the variation of the threshold current density and carrier lifetime with acceptor concentration in the active layer. An injected electron concentration of 2.5¿3 × 1018/cm3, independent of the acceptor concentration in the active layer, was found at the lasing threshold.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor doping; semiconductor junction lasers; GaInAsP/InP; LPE; acceptor concentration; carrier lifetime; lasing threshold; p-doping; semiconductor doping; semiconductor junction lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800492
