• DocumentCode
    958005
  • Title

    Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength facet coatings

  • Author

    Plumb, R.G. ; Curtis, J.P.

  • Author_Institution
    Standard Telecommunication Laboratories Limited, Harlow, UK
  • Volume
    16
  • Issue
    18
  • fYear
    1980
  • Firstpage
    706
  • Lastpage
    707
  • Abstract
    Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength antireflection coatings are described. These devices have low thresholds, broad spectra, high external quantum efficiencies and operate up to 10 mW in the fundamental transverse mode.
  • Keywords
    III-V semiconductors; antireflection coatings; gallium arsenide; semiconductor junction lasers; 10 mW; GaAs/(GaAl)As; channelled substrate narrow stripe lasers; quarter wavelength antireflection coatings; semiconductor junction lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800501
  • Filename
    4244276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958005