Title :
High sensitivity InP/InGaAs heterojunction phototransistor
Author :
Campbell, Joe C. ; Dentai, A.G. ; Burrus, C.A. ; Ferguson, J.F.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
Back-illuminated InP/InGaAs heterojunction phototransistors are described. These devices exhibit a low-level optical gain of 40 at 1 nW of incident power which represents a 1000 × improvement in sensitivity over previously reported phototransistors. The maximum gain is 1000 at 5 ¿W input. The response is relatively flat from 0.95 ¿m to 1.65 ¿m wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; phototransistors; InP/InGaAs; heterojunction phototransistors; integrated optics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800506
