Title :
InP/InGaAsP avalanche photodiodes with new guard ring structure
Author :
Osaka, F. ; Nakazima, K. ; Kaneda, T. ; Sakurai, T. ; Susa, N.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
A new guard ring structure for InP/InGaAsP avalanche photodiodes is described, which makes use of the impurity concentration difference between two InP epitaxial layers. The guard ring effect gives a low dark current and uniform multiplication characteristics at ¿ = 1.29 ¿m.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; p-n heterojunctions; III-V semiconductors; InP/InGaAsP; avalanche photodiodes; guard ring structure; p-n heterojunctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800508
