• DocumentCode
    958064
  • Title

    InP/InGaAsP avalanche photodiodes with new guard ring structure

  • Author

    Osaka, F. ; Nakazima, K. ; Kaneda, T. ; Sakurai, T. ; Susa, N.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    16
  • Issue
    18
  • fYear
    1980
  • Firstpage
    716
  • Lastpage
    717
  • Abstract
    A new guard ring structure for InP/InGaAsP avalanche photodiodes is described, which makes use of the impurity concentration difference between two InP epitaxial layers. The guard ring effect gives a low dark current and uniform multiplication characteristics at ¿ = 1.29 ¿m.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; p-n heterojunctions; III-V semiconductors; InP/InGaAsP; avalanche photodiodes; guard ring structure; p-n heterojunctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800508
  • Filename
    4244283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958064