Title :
Neutralised ion beam milling: anomalous sputter yield behaviour
Author :
Pitt, C.W. ; Singh, S.P.
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Abstract :
An experimental examination of charge-neutralised ion beam etching of a range of thin-film and bulk materials indicates an oscillatory etch rate function superimposed on the accepted sputter-yield/ion-beam-energy characteristic. The perturbation was affected by the beam neutralisation.
Keywords :
aluminium; chromium; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; ion beam effects; metallic thin films; semiconductor thin films; silicon; sputter etching; vacuum deposited coatings; anomalous sputter yield; bulk materials; charge neutralised ion beam etching; neutralised ion beam milling; oscillatory etch rate function; semiconductors; thin film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800512
