Title :
Cryogenic 2¿4 GHz f.e.t. amplifier
Author_Institution :
Universitÿt Bonn, Radioastronomisches Institut, Bonn, West Germany
Abstract :
A cryogenic single-stage broadband f.e.t. amplifier with an average noise temperature of 34 K (0.5 dB) over a bandwidth of 2 GHz has been developed. The average gain is 12 dB. The best spot noise temperature is 17 K (0.25 dB) at 3.2 GHz, which is competitive with cryogenic parametric amplifiers.
Keywords :
cryogenics; field effect transistor circuits; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; bandwidth; broadband amplifier; cryogenic FET amplifier; noise temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800519
