• DocumentCode
    958187
  • Title

    GaAs varactors for linear tuning characteristics

  • Author

    Colquhoun, A. ; Kohn, E. ; Rabe, W.J.

  • Author_Institution
    AEG-Telefunken, Semiconductor Division, Heilbronn, West Germany
  • Volume
    16
  • Issue
    19
  • fYear
    1980
  • Firstpage
    736
  • Lastpage
    737
  • Abstract
    A GaAs u.h.f. varactor diode featuring linear tuning characteristics over part of its tuning range (450¿750 MHz) is reported. The packaged diode has a series resistance of 270 m¿ at 600 MHz, with 95 m¿ due to the GaAs epitaxial layer. The design of the diode is presented together with technological details of its construction.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor technology; tuning; vapour phase epitaxial growth; varactors; GaAs epitaxial layer; GaAs varactors; UHF varactor diode; linear tuning characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800523
  • Filename
    4244299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958187