Title :
GaAs varactors for linear tuning characteristics
Author :
Colquhoun, A. ; Kohn, E. ; Rabe, W.J.
Author_Institution :
AEG-Telefunken, Semiconductor Division, Heilbronn, West Germany
Abstract :
A GaAs u.h.f. varactor diode featuring linear tuning characteristics over part of its tuning range (450¿750 MHz) is reported. The packaged diode has a series resistance of 270 m¿ at 600 MHz, with 95 m¿ due to the GaAs epitaxial layer. The design of the diode is presented together with technological details of its construction.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor technology; tuning; vapour phase epitaxial growth; varactors; GaAs epitaxial layer; GaAs varactors; UHF varactor diode; linear tuning characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800523
