• DocumentCode
    958225
  • Title

    AlGaAs transverse junction stripe laser with distributed Bragg reflector

  • Author

    Kawanishi, H. ; Hafich, M. ; Lenz, Benjamin ; Petersen, P.

  • Author_Institution
    Honeywell Inc., Corporate Material Sciences Center, Bloomington, USA
  • Volume
    16
  • Issue
    19
  • fYear
    1980
  • Firstpage
    738
  • Lastpage
    740
  • Abstract
    A new longitudinal mode stabilised AlGaAs transverse junction stripe laser with distributed Bragg reflector has been fabricated. Stabilised single longitudinal mode operation was obtained; temperature dependence of the lasing wavelength for the d.b.r. t.j.s. laser was 0.5 Å/°C.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser modes; semiconductor junction lasers; AlGaAs transverse junction stripe laser; DBRTJS laser; distributed Bragg reflector; lasing wavelength; stabilised single longitudinal mode operation; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800525
  • Filename
    4244301