DocumentCode :
958225
Title :
AlGaAs transverse junction stripe laser with distributed Bragg reflector
Author :
Kawanishi, H. ; Hafich, M. ; Lenz, Benjamin ; Petersen, P.
Author_Institution :
Honeywell Inc., Corporate Material Sciences Center, Bloomington, USA
Volume :
16
Issue :
19
fYear :
1980
Firstpage :
738
Lastpage :
740
Abstract :
A new longitudinal mode stabilised AlGaAs transverse junction stripe laser with distributed Bragg reflector has been fabricated. Stabilised single longitudinal mode operation was obtained; temperature dependence of the lasing wavelength for the d.b.r. t.j.s. laser was 0.5 Å/°C.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser modes; semiconductor junction lasers; AlGaAs transverse junction stripe laser; DBRTJS laser; distributed Bragg reflector; lasing wavelength; stabilised single longitudinal mode operation; temperature dependence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800525
Filename :
4244301
Link To Document :
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