DocumentCode :
958258
Title :
Single-mode operation of 500 Mbit/s modulated AlGaAs semiconductor laser by injection locking
Author :
Kobayashi, S. ; Yamada, J. ; Machida, Shimon ; Kimura, Tomohiro
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume :
16
Issue :
19
fYear :
1980
Firstpage :
746
Lastpage :
748
Abstract :
Single-mode operation of an AlGaAs double heterostructure semiconductor laser directly modulated at 500 Mbit/s data rate was realised by injection locking. The power ratio of central injected mode to total spectrum power was 94%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical modulation; semiconductor junction lasers; AlGaAs double heterostructure semiconductor laser; central injected mode; injection locking; power ratio; single mode operation; spectrum power;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800530
Filename :
4244306
Link To Document :
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