Title :
p-i-nf.e.t. hybrid optical receiver for 1.1¿1.6 ¿m optical communication systems
Author :
Smith, David R. ; Chatterjee, A.K. ; Rejman, M.A.Z. ; Wake, D. ; White, B.R.
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
The fabrication of low capacitance v.p.e. InGaAs/InP p-i-n photodiodes having a high responsivity up to 1.6 ¿m wavelength is described. The receiver sensitivities of the p-i-n f.e.t. hybrid receiver for a 280 Mbit/s system, measured at 1.3¿m and 1.5 ¿m are ¿38.9 dBm and ¿39.4 dBm,respectively.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; receivers; vapour phase epitaxial growth; InGaAs-InP p-i-n photodiodes; VPE; optical communication systems; p-i-n FET hybrid optical receiver; receiver sensitivities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800533
