Title :
Growth conditions to achieve mobility enhancement in AlxGa1¿xAs-GaAs heterojunctions by m.b.e.
Author :
Morko¿¿, H. ; Witkowski, L.C. ; Drummond, T.J. ; Stanchak, C.M. ; Cho, Andrew Y. ; Streetman, B.G.
Author_Institution :
University of Illinois, Department of Electrical Engineering and Coordinated Science Laboratory, Urbana, USA
Abstract :
Modulation doped Al0.25Ga0.75As-GaAs heterojunctions have been prepared by molecular beam epitaxy (m.b.e.). Al0.25Ga0.75As layers were doped with Si to a level of ~ 3 × 1017 cm¿3, whereas the GaAs layers were either unintentionally doped, doped lightly n-type with Sn, or doped lightly p-type with Be. Heterojunction structures having single and multiple periods have shown enhanced mobility only with the AlxGa1¿xAs layer at the surface and the GaAs layer underlying. These results represent the first report that electrons spill over only into the underlying GaAs layer from the top AlxGa1¿xAs layer.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; carrier density; carrier mobility; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; Al0.25Ga0.75As-GaAs heterojunctions; MBE; growth conditions; mobility; modulation doped; molecular beam epitaxy; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800535
