• DocumentCode
    958388
  • Title

    Unbiased InP detectors in the submillimetre wave region

  • Author

    Takada, Tatsuo ; Makimura, Tetsuya ; Ishibashi, Takayuki

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    16
  • Issue
    20
  • fYear
    1980
  • Firstpage
    765
  • Lastpage
    766
  • Abstract
    High sensitivity unbiased detectors employing Ni-nInP Schottky-barrier diodes have been developed in a submillimetre-wave region. The voltage sensitivities of 120 V/W at 300 GHz and 17 V/W at 450 GHz were obtained, which are about three times higher than those of the usually used unbiased Si point contact diode detectors.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; indium compounds; microwave detectors; 300 GHz; 450 GHz; Schottky barrier diode; infrared detector; submillimetre wave region; unbiased InP detector;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800543
  • Filename
    4244320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958388