Residual charges effect on the annealing behavior of Co-60 irradiated MOS capacitors

Author

Hwu, Jenn-Gwo ; Lee, Guang-Sheng ; Lee, Si-Chen ; Wang, Way-Seen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

35

Issue

1

fYear

1988

Firstpage

960

Lastpage

965

Abstract

It was experimentally observed that the residual charges of an MOS capacitor after C-V testing can exist for a long time. These charges include a nonzero field at the SiO/sub 2//Si interface, and subsequently affect the annealing behavior due to a charge-temperature effect if the MOS capacitor is left floating during annealing. This problem is solved by a flat-band condition annealing method based on a charge-temperature technique. The annealing kinetics of a Co-60 irradiated MOS capacitor are then studied. A power-law behavior of the annealing kinetics has been obtained for oxide charges annealed at 300 degrees C. Possible explanations are given for this observation.<>

Keywords

annealing; capacitors; ion beam effects; metal-insulator-semiconductor devices; /sup 60/Co irradiated MOS capacitor; 300 degC; C-V testing; SiO/sub 2/-Si; annealing behavior; annealing kinetics; charge-temperature effect; flat-band condition annealing method; power-law behavior; residual charges; Aging; Annealing; Capacitance-voltage characteristics; Ionizing radiation; Kinetic theory; MOS capacitors; MOS devices; Temperature; Testing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.12867

Filename

12867