Title :
Characterization of parabolic light-hole effects on an implanted-planar-buried-heterostructure graded-index separate-confinement-heterostructure InGaAs-AlGaAs strained-layer laser
Author :
Vawter, G. Allen ; Myers, D.R. ; Hohimer, J.P. ; Brennan, T.M. ; Hammons, B.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. The authors report CW, room-temperature operation of a novel strained single-quantum-well, implanted-planar-buried-heterostructure graded-index separate-confinement-heterostructure (IPBHGRINSCH) laser in InGaAs-AlGaAs. Using this novel IPBHGRINSCH structure, the authors report the first direct evidence of the effects of the highly parabolic valence subband in strained quantum-well injected lasers as exhibited by an enhanced wavelength shift versus injection current compared to unstrained reference GaAs-AlGaAs devices. The present results, demonstrating band-filling behavior in strained-quantum-well injection lasers, suggest that strained-layer lasers can be used for frequency modulation applications requiring enhanced current sensitivity or for amplitude modulation above threshold with enhanced frequency stability at lower injection levels.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; integrated optics; ion implantation; laser frequency stability; optical modulation; semiconductor junction lasers; BH-GRIN-SCH structure; CW operation; InGaAs-AlGaAs; amplitude modulation; band-filling behavior; frequency modulation applications; frequency stability; graded-index; highly parabolic valence subband; implanted-planar-buried-heterostructure; injection current; parabolic light-hole effects; room-temperature operation; semiconductor lasers; separate-confinement-heterostructure; single-quantum-well; strained quantum-well injected lasers; strained-layer laser; wavelength shift; Amplitude modulation; Frequency modulation; Laser stability; Masers; Molecular beam epitaxial growth; Optical control; Optical materials; Quantum well lasers; Solid lasers; Strain control; Surface emitting lasers; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
