Title :
V-DH laser: a laser with a V-shaped active region grown by metalorganic c.v.d.
Author :
Mori, Yojiro ; Matsuda, Osnmu ; Morizane, K. ; Watanabe, N.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
A single mode c.w. AlxGa1¿xAs/GaAs laser was made by metalorganic c.v.d. A double heterostructure with a V-shaped active region and a junction stripe geometry was grown on a groove-etched substrate. The minimum c.w. threshold current and the maximum differential quantum efficiency obtained were 15 mA and 65% (250 ¿m length cavity). The laser´s beam shape was nearly circular, with an aspect ratio from 1.3 to 1.4.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; AlxGa1-xAs/GaAs; V-shaped active region; double heterostructure; junction stripe geometry; metalorganic chemical vapour deposition; quantum efficiency; semiconductor junction lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800558
