• DocumentCode
    958614
  • Title

    Deep level defects in Au/ZnSe Schottky diodes

  • Author

    Besomi, P. ; Wessels, B.W.

  • Author_Institution
    Northwestern University, Department of Materials Science & Engineering & Materials Research Center, Evanston, USA
  • Volume
    16
  • Issue
    21
  • fYear
    1980
  • Firstpage
    794
  • Lastpage
    795
  • Abstract
    Properties of deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A total of five electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentrations ranged from 1012 to 1014 cm¿3.
  • Keywords
    Schottky-barrier diodes; deep levels; electron traps; gold; zinc compounds; Au/ZnSe Schottky diodes; deep level defects; electron traps; heteroepitaxially grown; transient capacitance spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800565
  • Filename
    4244343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958614