Title :
Simulations of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias
Author :
Mahon, Simon J. ; Skellern, D.J.
Author_Institution :
Sch. of Math., Phys., Comput. & Electron., Macquarie Univ., North Ryde, NSW
Abstract :
The usefulness over an extended range of a high-electron-mobility transistor (HEMT) model previously validated for a 1-25-GHz S-parameter model is shown. Experimental and simulation results for the DC drain current and 1-50-GHz S-parameters of a pseudomorphic 0.32-μm gate AlGaAs-InGaAs-GaAs HEMT are presented. The model predicts the device´s DC current and S-parameters as functions of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77±0.07)×105 m-s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic In0.15Ga0.85As under ≈0.3-μm gates
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 0.32 micron; 1 to 50 GHz; AlGaAs-InGaAs-GaAs; DC drain current; HEMT; S-parameter model; gate bias; gate length; high-electron-mobility transistor; Capacitance; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Ohmic contacts; Scattering parameters; Semiconductor device modeling; Semiconductor process modeling; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
