Simulations of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias

Author

Mahon, Simon J. ; Skellern, D.J.

Author_Institution

Sch. of Math., Phys., Comput. & Electron., Macquarie Univ., North Ryde, NSW

Volume

41

Issue

6

fYear

1993

Firstpage

1065

Lastpage

1067

Abstract

The usefulness over an extended range of a high-electron-mobility transistor (HEMT) model previously validated for a 1-25-GHz S-parameter model is shown. Experimental and simulation results for the DC drain current and 1-50-GHz S-parameters of a pseudomorphic 0.32-μm gate AlGaAs-InGaAs-GaAs HEMT are presented. The model predicts the device´s DC current and S-parameters as functions of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77±0.07)×10⁵ m-s^-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic In_0.15Ga_0.85As under ≈0.3-μm gates

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 0.32 micron; 1 to 50 GHz; AlGaAs-InGaAs-GaAs; DC drain current; HEMT; S-parameter model; gate bias; gate length; high-electron-mobility transistor; Capacitance; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Ohmic contacts; Scattering parameters; Semiconductor device modeling; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.238526

Filename

238526