Title :
Large-signal HBT characterization and modeling at millimeter wave frequencies
Author :
Teeter, Douglas A. ; East, Jack R. ; Haddad, George I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique
Keywords :
equivalent circuits; heterojunction bipolar transistors; microwave measurement; power measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; 8 to 35 GHz; EHF; HBT characterization; SHF; active load pull system; bias dependence; component losses; computer models; frequency dependence; gain compression; heterojunction bipolar transistor; large-signal analysis; millimeter wave frequencies; modeling; tuner system; Frequency dependence; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Impedance measurement; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Power measurement; Tuners;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
