Large-signal HBT characterization and modeling at millimeter wave frequencies

Author

Teeter, Douglas A. ; East, Jack R. ; Haddad, George I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

41

Issue

6

fYear

1993

Firstpage

1087

Lastpage

1093

Abstract

A detailed large-signal analysis for the heterojunction bipolar transistor (HBT) is presented. Using a combination of computer models and corrected measurements, the bias and frequency dependence of the gain compression has been analyzed from 8 to 35 GHz for several HBTs. From 8 to 16 GHz, a commercial tuner system was used for making the measurements. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Several comparisons between measured and modeled data are provided to illustrate the effectiveness of the characterization technique

Keywords

equivalent circuits; heterojunction bipolar transistors; microwave measurement; power measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; 8 to 35 GHz; EHF; HBT characterization; SHF; active load pull system; bias dependence; component losses; computer models; frequency dependence; gain compression; heterojunction bipolar transistor; large-signal analysis; millimeter wave frequencies; modeling; tuner system; Frequency dependence; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Impedance measurement; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Power measurement; Tuners;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.238532

Filename

238532