A vertical field-effect transistor with an InGaAs/GaAs pseudomorphic planar doped barrier launcher

Summary form only given. The authors report improved DC performance in a vertical field effect transistor (VFET) by inserting a pseudomorphic n⁺-In_xGa_1-xAs (x=0.07) layer between a planar doped barrier (PDB) launcher and an n-channel layer instead of an n⁺-GaAs layer. In this structure, higher-energy hot electrons can be injected into the channel and the spillover of electrons from the n⁺-layer to the n-channel can be reduced because of the resulting conduction band discontinuity. A transconductance (maximum g_m=400 mS/mm), average electron velocity ( nu _av=3.86*10⁷ cm/s), and voltage gain (g_m/g_d=50) that represent a significant improvement over previous results for VFETs have been obtained.