Metallization effects on GaAs microstrip line attenuation

Author

Carroll, Jim ; Chang, Kai

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

41

Issue

6

fYear

1993

Firstpage

1227

Lastpage

1229

Abstract

The transmission line losses of plated gold GaAs microstrip were investigated from 5 to 30 GHz. Experimental attenuation coefficients were extracted from quality factor measurements of 50 Ω straight microstrip resonators. The measured attenuation coefficients for plated gold microstrip were found to be 38% higher than previously published data on evaporated gold microstrip, and 44% higher than Computer Aided Design (CAD) simulations. Empirical bulk resistivities were found that correctly characterize GaAs plated line losses for CAD models. This paper indicates that GaAs microstrip line attenuation cannot be completely characterized by DC resistivity alone, and that empirical microstrip parameters are needed for accurate CAD modeling

Keywords

III-V semiconductors; MMIC; circuit CAD; gallium arsenide; gold; metallisation; microstrip lines; 5 to 30 GHz; Au-GaAs; CAD models; DC resistivity; GaAs microstrip line attenuation; attenuation coefficients; bulk resistivities; metallisation; plated line losses; quality factor measurements; transmission line losses; Attenuation measurement; Conductivity; Data mining; Design automation; Gallium arsenide; Gold; Metallization; Microstrip; Propagation losses; Transmission line measurements;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.238550

Filename

238550