Title :
High-performance ion-implanted MES-FET on InP using enhanced barrier self-aligned Schottky gate
Author :
Chakrabarti, U.K. ; Seabury, C.W. ; Dutta, N.K. ; Vella-Coleiro, G.P.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. An enhanced barrier Schottky diode with a barrier height of 0.78 eV and an ideality factor of 1.04 was fabricated by chemically modifying the surface of InP without the aid of a dielectric layer. This process involves the solution treatment of the InP surface. The presence of ruthenium on the surface was determined by X-ray photoelectron spectroscopy. This process is reproducible and stable with respect to time. The authors discuss results on MIS capacitors fabricated simultaneously with and without this surface treatment.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; indium compounds; ion implantation; III-V semiconductors; InP; MIS capacitors; Ru; X-ray photoelectron spectroscopy; enhanced barrier; self-aligned Schottky gate; solution treatment; surface chemical modification; Atomic layer deposition; Capacitors; Chemicals; Dielectrics; FETs; Fabrication; Implants; Indium phosphide; Leakage current; MESFETs; Schottky diodes; Spectroscopy; Surface treatment; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
