Monolithically integrated InGaAs p-i-n InP-MISFET PINFET grown by chloride vapor phase epitaxy

Summary form only given. The authors report the monolithic integration of an InGaAs p-i-n detector with an InP metal-insulator-semiconductor field-effect transistor (MISFET) with f_T=29 GHz for a 1- mu m gate length. The monolithically integrated p-i-n detectors are characterized by leakage currents of about 1 nA at a reverse bias of up to 10 V. The MISFETs had extrinsic g_m values of 200 mS/mm for a 1- mu m gate length. The gate-to-source leakage current of the MISFETs was below 100 nA up to a 1.8-V forward bias. Bit-error measurements at a wavelength of 1.55 mu m demonstrated PINFET receiver sensitivities of -34.1 and -25.4 dBm at 200 and 600 Mb/s, respectively. Preliminary measurements at 2 Gb/s show a receiver sensitivity of -20.0 dBm.