Title :
Low-temperature deposition of hafnium silicate gate dielectrics
Author :
Punchaipetch, Prakaipetch ; Pant, Gaurang ; Quevedo-Lopez, Manuel A. ; Yao, C. ; El-Bouanani, Mohamed ; Kim, Moon J. ; Wallace, Robert M. ; Gnade, Bruce E.
Author_Institution :
Nara Inst. of Sci. & Technol., Japan
Abstract :
The physical and electrical properties of hafnium silicate (HfSixOy) films produced by low-temperature processing conditions (≤150°C) suitable for flexible display applications were studied using sputter deposition and ultra-violet generated ozone treatments. Films with no detectable low-κ interfacial layer were produced. Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy were used to determine the composition, chemical bonding environment, thickness, and film interface. The electrical behavior of the as-deposited and annealed hafnium silicate films were determined by current-voltage (I--V) and capacitance-voltage (C--V) measurements.
Keywords :
Rutherford backscattering; X-ray photoelectron spectra; annealing; bonds (chemical); dielectric materials; dielectric thin films; hafnium compounds; interface phenomena; low-temperature techniques; oxidation; sputter deposition; transmission electron microscopy; 150 degC; HfSixOy; Rutherford backscattering spectroscopy; X-ray photoelectron spectroscopy; annealing; as-deposited hafnium silicate films; capacitance-voltage measurements; chemical bonding environment; current-voltage measurements; electrical behavior; electrical properties; film interface; film thickness; flexible display applications; hafnium silicate dielectrics; hafnium silicate films; high-resolution transmission electron microscopy; low-temperature deposition; low-temperature processing; physical properties; sputter deposition; ultraviolet generated ozone treatments; Backscatter; Bonding; Chemicals; Dielectrics; Displays; Hafnium; Photoelectron microscopy; Spectroscopy; Sputtering; Transmission electron microscopy;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2004.824109
