DocumentCode
959068
Title
Ion-Implanted p-Resistor Reliability
Author
Chaudhari, Pundlik K. ; Nelson, Glenn R. ; Nagarajan, Arunchala
Author_Institution
IBM corp,NY
Volume
3
Issue
2
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
258
Lastpage
261
Abstract
One of the key aspects of large-scale integration in bipolar technology depends on the use of high valued resistors. Ion implantation can lead to higher valued resistors not possible with diffused technology. Two different process technologies, pre-emitter and post-emitter, for making ion-implanted resistors are described. Also described are measured profiles, reliability studies carried out on p-resistors made by the two technologies, and a model describing the resistor drift with voltage and temperature.
Keywords
Bipolar integrated circuits; Integrated circuit reliability; Ion implantation; Annealing; Boron; Conductivity; Implants; Ion implantation; Large scale integration; Resistors; Stability; Temperature; Voltage;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1980.1135612
Filename
1135612
Link To Document