• DocumentCode
    959089
  • Title

    Stimulated emission from monolayer thick quantum-well heterostructures

  • Author

    Lee, J.H. ; Kolbas, R.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    36
  • Issue
    11
  • fYear
    1989
  • fDate
    11/1/1989 12:00:00 AM
  • Firstpage
    2613
  • Abstract
    Summary form only given. Stimulated emission from clearly defined quantum-well transitions has been observed from single quantum wells as thin as one monolayer. These results are unexpected, since previous experimental and theoretical work has indicated that if the well width is comparable to or smaller than the scattering path length of the electrons or holes, carrier collection becomes inefficient and the quantum well cannot support stimulated emission. Well-defined confined particle transitions were observed from the GaAs quantum wells for thicknesses as thin as two monolayers (5.65 AA) and from pseudomorphic InAs quantum wells for thicknesses as thin as one monolayer (3 AA). Continuous-wave laser thresholds as low as 820 W/cm2, Jeq=340 A/cm2 from the pseudomorphic samples and 1740 W/cm2, 720 A/cm2 from the lattice-matched samples have been measured at 77 K. Data are presented which demonstrate that monolayer thick quantum wells can operate efficiently as lasers at low thresholds despite previous experimental and theoretical predictions to the contrary.
  • Keywords
    semiconductor junction lasers; semiconductor quantum wells; stimulated emission; 3 AA; 5.65 AA; CW laser thresholds; GaAs; SQW; monolayer thickness; pseudomorphic InAs; quantum-well heterostructures; scattering path length; semiconductor lasers; single quantum wells; stimulated emission; Carrier confinement; Charge carrier processes; Electron emission; Gallium arsenide; Laser transitions; Particle scattering; Quantum mechanics; Quantum well lasers; Quantum wells; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43724
  • Filename
    43724