DocumentCode
959089
Title
Stimulated emission from monolayer thick quantum-well heterostructures
Author
Lee, J.H. ; Kolbas, R.M.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
36
Issue
11
fYear
1989
fDate
11/1/1989 12:00:00 AM
Firstpage
2613
Abstract
Summary form only given. Stimulated emission from clearly defined quantum-well transitions has been observed from single quantum wells as thin as one monolayer. These results are unexpected, since previous experimental and theoretical work has indicated that if the well width is comparable to or smaller than the scattering path length of the electrons or holes, carrier collection becomes inefficient and the quantum well cannot support stimulated emission. Well-defined confined particle transitions were observed from the GaAs quantum wells for thicknesses as thin as two monolayers (5.65 AA) and from pseudomorphic InAs quantum wells for thicknesses as thin as one monolayer (3 AA). Continuous-wave laser thresholds as low as 820 W/cm2, Jeq=340 A/cm2 from the pseudomorphic samples and 1740 W/cm2, 720 A/cm2 from the lattice-matched samples have been measured at 77 K. Data are presented which demonstrate that monolayer thick quantum wells can operate efficiently as lasers at low thresholds despite previous experimental and theoretical predictions to the contrary.
Keywords
semiconductor junction lasers; semiconductor quantum wells; stimulated emission; 3 AA; 5.65 AA; CW laser thresholds; GaAs; SQW; monolayer thickness; pseudomorphic InAs; quantum-well heterostructures; scattering path length; semiconductor lasers; single quantum wells; stimulated emission; Carrier confinement; Charge carrier processes; Electron emission; Gallium arsenide; Laser transitions; Particle scattering; Quantum mechanics; Quantum well lasers; Quantum wells; Stimulated emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.43724
Filename
43724
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