DocumentCode :
959092
Title :
Picosecond SESAM-based ytterbium mode-locked fiber lasers
Author :
Gomes, Luís A. ; Orsila, Lasse ; Jouhti, Tomi ; Okhotnikov, Oleg G.
Author_Institution :
Optoelectronics Res. Centre, Tech. Univ. of Tampere, Finland
Volume :
10
Issue :
1
fYear :
2004
Firstpage :
129
Lastpage :
136
Abstract :
Using semiconductor saturable absorber mirrors and a grating-pair dispersion compensator, we obtain reliable self-starting mode locking of a ytterbium (Yb) fiber laser tunable over 125 nm. The 980-1105-nm tuning range is achieved by optimization of nonlinear reflection and bandgap characteristics of the multiple-quantum-well saturable absorber and by proper engineering of the laser cavity. A short-length Yb-doped double-clad amplifier seeded with mode-locked Yb-fiber laser produces picosecond pulses with energy of 30 nJ (700 mW of average power). A compact version of the fiber laser was built using a Gires-Tournois compensator and short length (1-cm long) of highly doped Yb fiber. Using a novel semiconductor saturable abserver mirror based on GaInNAs structure, self-started 1.5-ps pulse mode-locked operation was obtained at 1023 nm with a repetition rate of 95 MHz. A mode-locked Yb-doped fiber laser was also developed without using any dispersion compensation technique. Overall group-velocity dispersion was minimized by using highly doped Yb fiber in a compact amplifying loop cavity. Self-started mode-locked operation was obtained in 980-1030-nm wavelength range with a fundamental repetition rate of 140 MHz. Without using dispersion compensation, the lasers produced pulses in a range from 15 to 26 ps.
Keywords :
III-V semiconductors; diffraction gratings; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; laser tuning; light reflection; optical fibre amplifiers; optical fibre dispersion; optical pulse generation; optical saturable absorption; semiconductor quantum wells; ytterbium; 1 cm; 1.5 ps; 140 MHz; 15 to 26 ps; 30 nJ; 700 mW; 95 MHz; 980 to 1105 nm; GaInNAs; GaInNAs structure; Gires-Tournois compensator; Yb; bandgap characteristics; compact amplifying loop cavity; grating-pair dispersion compensator; group-velocity dispersion; laser cavity; mode-locked Yb-doped fiber laser; mode-locked Yb-fiber laser; multiple-quantum well saturable absorber; nonlinear reflection; picosecond SESAM-based ytterbium mode-locked fiber lasers; picosecond pulses; repetition rate; selfstarted 1.5-ps pulse mode-locked operation; selfstarting mode locking; semiconductor saturable absorber mirrors; short-length Yb-doped double-clad amplifier; tunable ytterbium fiber laser; Fiber gratings; Fiber lasers; Laser mode locking; Laser tuning; Mirrors; Optical pulses; Pulse amplifiers; Semiconductor device reliability; Semiconductor lasers; Ytterbium;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2003.822918
Filename :
1288082
Link To Document :
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