• DocumentCode
    959098
  • Title

    Time-resolved phonon-assisted stimulated emission in quantum-well heterostructures

  • Author

    Benjamin, Seldon D. ; Lo, Y.C. ; Kolbas, R.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    36
  • Issue
    11
  • fYear
    1989
  • fDate
    11/1/1989 12:00:00 AM
  • Firstpage
    2613
  • Abstract
    Summary form only given. The authors report the observation of time-resolved photo-pumped operation of phonon-assisted stimulated emission in a series of AlGaAs-GaAs single quantum wells with different well thicknesses (20, 34, and 54 AA). The temporal characteristics of the phonon-assisted stimulated emission are distinct from the laser operation of the confined particle states in that the phonon-assisted process is always delayed in time (30-80 ps) and has a larger temporal full width at half-maximum. Also, lasing on the confined particle states is quenched as the lasing on the phonon sidebands begins. Data are presented on the emission intensity versus wavelength versus time and the dependence of the relative (and absolute) delay times as a function of excitation power and sample geometry. The delay time is uncorrelated with the sample geometry (and thus photon lifetime in the cavity) but is correlated with the excitation power (capacity to generate phonons). The delay is interpreted to be the time necessary to build up a sufficiently large phonon density (possibly by stimulated phonon emission) to initiate the phonon-assisted stimulated emission, which then dominates the spectral output.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; lattice phonons; semiconductor junction lasers; semiconductor quantum wells; stimulated emission; 20 to 54 AA; AlGaAs-GaAs single quantum wells; confined particle states; delay times; excitation power; phonon sidebands; phonon-assisted stimulated emission; photon lifetime; quantum-well heterostructures; sample geometry; semiconductor lasers; spectral output; temporal characteristics; time-resolved photo-pumped operation; well thicknesses; Artificial intelligence; Delay effects; Diodes; Gallium arsenide; Geometry; Infrared detectors; Lithography; Oscillators; Phonons; Power generation; Propagation delay; Quantum well devices; Quantum well lasers; Quantum wells; Stimulated emission; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43725
  • Filename
    43725