DocumentCode
959101
Title
Optimum load admittance for a microwave power transistor
Author
Tucker, R.S.
Author_Institution
University of Queensland, St. Lucia, Australia
Volume
68
Issue
3
fYear
1980
fDate
3/1/1980 12:00:00 AM
Firstpage
410
Lastpage
411
Abstract
A theoretical analysis of the output nonlinearity in a microwave transistor shows the relationship between the large-signal output admittance and the optimum load admittance for maximum output power. Both of these admittances depend strongly on the RF signal power level.
Keywords
Admittance; Australia; Dielectrics; Electromagnetic scattering; Microwave transistors; Power amplifiers; Power transistors; Radio frequency; Reflection; Testing;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1980.11650
Filename
1455919
Link To Document