Title :
Optimum load admittance for a microwave power transistor
Author_Institution :
University of Queensland, St. Lucia, Australia
fDate :
3/1/1980 12:00:00 AM
Abstract :
A theoretical analysis of the output nonlinearity in a microwave transistor shows the relationship between the large-signal output admittance and the optimum load admittance for maximum output power. Both of these admittances depend strongly on the RF signal power level.
Keywords :
Admittance; Australia; Dielectrics; Electromagnetic scattering; Microwave transistors; Power amplifiers; Power transistors; Radio frequency; Reflection; Testing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1980.11650
