Title :
Ultrafast control of hole spin by electric field in semiconductors
Author_Institution :
Semicond. Phys. Inst., Vilnius, Lithuania
Abstract :
Ultrafast and coherent transitions induced by electric field between spin states of the valence band in semiconductors are considered. It is shown that using optimized femtosecond electric fields one can, in principle, control a selected component of the hole spin. The feasibility of hole spin switching is illustrated using the well-known Luttinger-Kohn Hamiltonian for valence bands of tetrahedral and zinc-blende semiconductors. The presented results may be useful in the development of the ultrafast semiconductor spintronics.
Keywords :
band theory; electric field effects; high-speed optical techniques; magnetoelectronics; semiconductors; spin dynamics; valence bands; Luttinger-Kohn Hamiltonian; coherent transition; femtosecond electric field; hole spin; hole spin switching; spin states; tetrahedral semiconductors; ultrafast control; ultrafast semiconductor spintronics; ultrafast transitions; valence band; zinc-blende semiconductors; Charge carriers; Control systems; Magnetic analysis; Magnetic fields; Magnetoelectronics; Optical pulses; Switches; Temperature distribution; Ultrafast electronics; Ultrafast optics;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2004.824078
