Ultrafast control of hole spin by electric field in semiconductors

Author

Dargys, Adolfas

Author_Institution

Semicond. Phys. Inst., Vilnius, Lithuania

Volume

10

Issue

1

fYear

2004

Firstpage

155

Lastpage

158

Abstract

Ultrafast and coherent transitions induced by electric field between spin states of the valence band in semiconductors are considered. It is shown that using optimized femtosecond electric fields one can, in principle, control a selected component of the hole spin. The feasibility of hole spin switching is illustrated using the well-known Luttinger-Kohn Hamiltonian for valence bands of tetrahedral and zinc-blende semiconductors. The presented results may be useful in the development of the ultrafast semiconductor spintronics.

Keywords

band theory; electric field effects; high-speed optical techniques; magnetoelectronics; semiconductors; spin dynamics; valence bands; Luttinger-Kohn Hamiltonian; coherent transition; femtosecond electric field; hole spin; hole spin switching; spin states; tetrahedral semiconductors; ultrafast control; ultrafast semiconductor spintronics; ultrafast transitions; valence band; zinc-blende semiconductors; Charge carriers; Control systems; Magnetic analysis; Magnetic fields; Magnetoelectronics; Optical pulses; Switches; Temperature distribution; Ultrafast electronics; Ultrafast optics;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2004.824078

Filename

1288085