InP-based HIGFETs for complementary circuits

Author

Feuer, Mark D. ; He, Yuhong ; Tennant, D.M. ; Shunk, S.C. ; Brown-Goebeler, K.F. ; Behringer, R.E. ; Chang, T.Y.

Author_Institution

AT&T Bell Labs, Holmdel, NJ, USA

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2616

Abstract

Summary form only given. The authors report p-channel heterostructure FETs fabricated on InP substrates, as well as advanced results on submicrometer n-channel HIGFETs. P-HIGFETs with 1- mu m nominal gate lengths were made using lattice-matched InGaAs channels and InAlAs barriers. Threshold voltage and threshold uniformity were studied as a function of gate length for n-channel InGaAs/InAlAs HIGFETs in the range from 0.4 to 1.2 mu m. Microwave characterization of several n-HIGFET wafers with gate lengths down to 0.3 mu m yielded cutoff frequencies of up to 115 GHz, corrected for pad capacitance, with an effective drift velocity of 2.0*10⁷ cm/s.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 0.3 to 1.2 micron; 115 GHz; InGaAs-InAlAs-InP; InP substrates; complementary circuits; cutoff frequencies; effective drift velocity; gate length; microwave characterisation; p-channel heterostructure FETs; pad capacitance; submicrometer n-channel HIGFETs; threshold uniformity; threshold voltage; Capacitance; Circuits; Cutoff frequency; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43729

Filename

43729