• DocumentCode
    959274
  • Title

    New logic functional device using transverse spreading of a high-field domain in n type GaAs

  • Author

    Tomizawa, Keiichi ; Kawashima, Mitsumasa ; Kataoka, S.

  • Author_Institution
    Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
  • Volume
    7
  • Issue
    10
  • fYear
    1971
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    New functional devices making use of the transverse spreading of a high-field domain in an H shaped n type GaAs sample are proposed, with some experimental results. It is expected that such devices will perform complex logic operations, such as a modification of Sheffer´s stroke at extremely high speed.
  • Keywords
    III-V semiconductors; domains; gallium arsenide; logic circuits; logic devices; semiconductor materials; AND; Ag; Au-Ge; BaTiO3; OR; Sheffer stroke; high field domain; logic functional device; n-GaAs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710162
  • Filename
    4244414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=959274