Title :
Cryogenic Yb3+-Doped Solid-State Lasers
Author :
Fan, Tso Yee ; Ripin, Daniel J. ; Aggarwal, Roshan L. ; Ochoa, Juan R. ; Chann, Bien ; Tilleman, Michael ; Spitzberg, Joshua
Author_Institution :
Massachusetts Inst. of Technol., Lexington
Abstract :
Cryogenically cooled solid-state lasers promise a revolution in power scalability while maintaining a good beam quality because of significant improvements in efficiency and thermo-optic properties. This is particularly true for Yb lasers because of their relatively low quantum defect and relatively broadband absorption even at cryogenic temperatures. Thermo-optic properties of host materials, including thermal conductivity, thermal expansion, and refractive index at low temperature, are reviewed and data presented for YAG (ceramic and single crystal), GGG, GdVO4, and Y2O3. Spectroscopic properties of Yb:YAG and Yb:LiYF4 (YLF) including absorption cross sections, emission cross sections, and fluorescence lifetimes at cryogenic temperatures are characterized. Recent experiments have pushed the power from an end-pumped cryogenically cooled Yb:YAG laser to 455-W continuous-wave output power from 640-W incident pump power at an of M2 1.4.
Keywords :
alumina; fluorescence; gadolinium compounds; laser beams; low-temperature techniques; optical materials; optical pumping; refractive index; solid lasers; thermal conductivity; thermal expansion; thermo-optical effects; ytterbium; GGG; GdGG:Yb; GdGG:Yb - System; GdVO4:Yb; Y2O3:Yb-; YAG; YAG:Yb; Yb3+-doped solid-state lasers; absorption cross sections; beam quality; broadband absorption; cryogenic cooling; emission cross sections; fluorescence lifetimes; power 455 W; power 640 W; power scalability; quantum defect; refractive index; thermal conductivity; thermal expansion; thermo-optic properties; Absorption; Conducting materials; Cryogenics; Crystalline materials; Laser beams; Scalability; Solid lasers; Temperature; Thermal conductivity; Thermal expansion; Laser thermal factors; lasers; optical materials;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.896602