DocumentCode
959364
Title
Improved method for calculation of net impurity-doping profile of double-diffused transistors
Author
Durbin, F.
Author_Institution
Centre d´´Ã\x89tudes de B III (Service L), Montrouge, France
Volume
7
Issue
10
fYear
1971
Firstpage
243
Lastpage
244
Abstract
A computational technique is described, the purpose of which is to obtain an effective doping profile for double-diffused transistors, using current manufacturers data as starting parameters. The guiding principle in this method is to obtain a doping profile with a calculated base region in full agreement with junction-depth measurements.
Keywords
bipolar transistors; semiconductor doping; double diffused transistors; impurity doping profile; junction depth measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710165
Filename
4244424
Link To Document