DocumentCode :
959404
Title :
Planar Double-Heterostructure GaAlAs LED´s Packaged for Fiber Optics
Author :
Speer, R. Stephen ; Hawkins, Bobby M.
Author_Institution :
Spectronics, Div. of Honeywell, TX
Volume :
3
Issue :
4
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
480
Lastpage :
484
Abstract :
A light-emitting diode (LED) design is described which incorporates the quantum efficiency advantages of a double heterostructure (DH) without the critical processing techniques required for Burrus diodes and DH lasers. A planar process is employed which yields internal quantum efficiencies as high as 100 percent and very rugged LED chips, comparable with most high-volume LED´s manufactured in the industry. The packaging concept used for the LED allows a pluggable fiber-optic interface with generous mechanical alignment tolerances and provides a hermetic environment for the LED.
Keywords :
Light-emitting diodes (LED´s); Optical fibers; Semiconductor device packaging; Semiconductor heterojunctions; DH-HEMTs; Etching; Gallium arsenide; Light emitting diodes; Manufacturing industries; Manufacturing processes; Optical design; Optical fibers; Packaging; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1980.1135647
Filename :
1135647
Link To Document :
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