DocumentCode
959424
Title
Sputter-delineated MOST process
Author
Singh, Awatar
Author_Institution
Central Electronics Engineering Research Institute, Raj., India
Volume
68
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
536
Lastpage
537
Abstract
A process, based on pyrolytically deposited doped oxide diffusion technology and sputter (Spu)-delineated (del) source and drain windows to obtain short molybdenum gate lengths, for the fabrication of MOSFET is described. Various advantages are also pointed out.
Keywords
Ammeters; Chemicals; Electrical resistance measurement; FETs; Fabrication; MOSFET circuits; Member and Geographic Activities Board committees; Resistors; Switches; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1980.11684
Filename
1455953
Link To Document