Title :
Sputter-delineated MOST process
Author_Institution :
Central Electronics Engineering Research Institute, Raj., India
fDate :
4/1/1980 12:00:00 AM
Abstract :
A process, based on pyrolytically deposited doped oxide diffusion technology and sputter (Spu)-delineated (del) source and drain windows to obtain short molybdenum gate lengths, for the fabrication of MOSFET is described. Various advantages are also pointed out.
Keywords :
Ammeters; Chemicals; Electrical resistance measurement; FETs; Fabrication; MOSFET circuits; Member and Geographic Activities Board committees; Resistors; Switches; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1980.11684
