Title :
Experimental verification of bistable switching with Gunn diodes
Author_Institution :
Fraunhofer Gesellschaft, Institut fÿr Angewandte Festkörperphysik, Freiburg, West Germany
Abstract :
It has been demonstrated experimentally that high-quality Gunn diodes exhibit switching between two stable states. One of them is the ohmic state below threshold. The other one is a low-current high-voltage state and is associated with a stationary high-field layer at the anode.
Keywords :
Gunn diodes; semiconductor switches; GaAs; Gunn diodes; InP; bistable switching; high field domain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710167
