Title :
RF properties of epitaxial lift-off HEMT devices
Author :
Young, Paul G. ; Alterovitz, Samuel A. ; Mena, Rafael A. ; Smith, Edwyn D.
Author_Institution :
Dept. of Electr. Eng., Toledo Univ., OH, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step, showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing a consistent increase of FT of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration
Keywords :
Hall effect; S-parameters; aluminium compounds; carrier density; equivalent circuits; gallium arsenide; high electron mobility transistors; magnetoresistance; semiconductor device models; semiconductor epitaxial layers; solid-state microwave devices; 3 to 18 GHz; Al0.23Ga0.77As-In0.2Ga0.8 As-GaAs; Al0.3Ga0.7As-GaAs-Al0.3Ga 0.7As; AlAs parting layer; GaAs substrate; Hall measurements; P-HEMT structures; RF properties; S-parameters; Shubnikov de Haas measurement; enhanced carrier concentration; epitaxial lift-off HEMT devices; equivalent circuit; low frequency enhancement; maximum stable gain; microwave transport; small signal models; Gallium arsenide; HEMTs; Insulation; Microwave devices; Microwave transistors; Optical materials; Radio frequency; Semiconductor materials; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
